This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Silanna Uv Technologies Pte Ltd. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Jordan Roy Nicholls: Semiconductor Invention and Patent
Introduction
Jordan Roy Nicholls is an inventor associated with Hamilton, Australia, and Silanna UV Technologies Pte Ltd. His patent work includes a semiconductor structure designed to create an energy barrier within a polar semiconductor superlattice.
Latest Patents
Nicholls is associated with 1 patent: “Polar Semiconductor Superlattice with Energy Barrier.” The invention describes a semiconductor structure containing a superlattice made of repeating unit cells, each with a narrow bandgap (NBG) layer and a wide bandgap (WBG) layer. An energy barrier region contacts the superlattice and contains alternating NBG and WBG polar semiconductor layers. Its total thickness equals that of N/2 superlattice unit cells, where N is an even number of at least four. The barrier is formed by varying the thicknesses of its layers so that they are both thicker and thinner than their corresponding superlattice layers.
Career Highlights
Nicholls’s documented patent contribution focuses on semiconductor layer design and the engineering of energy barriers in polar semiconductor structures. He is associated with Silanna UV Technologies Pte Ltd.
Collaborations
The available information connects Nicholls’s patent work with Silanna UV Technologies Pte Ltd. It does not specify additional collaborators or research partners.
Conclusion
Jordan Roy Nicholls’s patent describes a carefully structured polar semiconductor superlattice that uses alternating layer thicknesses to form an energy barrier.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile