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For the Inventor, By the Inventor

Seongnam, South Korea

Joon Hee Lee

This inventor holds 4 USPTO granted patents. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2017-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Joon Hee Lee. Retrieved from https://idiyas.com/inventor/joon-hee-lee-05grkeb4

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 4

% Patents Active = 100.0

Average Co-Inventor Count = 3.7

ph-index = 2

Forward Citations = 11(Granted Patents)


Location History:

  • Seongnam-si, KR (2017 - 2019)
  • Goyang-si, KR (2024)

Company Filing History:

goldMedal4 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2017-2024

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4 patents (USPTO):Explore Patents
1. 11942956 - Time-to-digital converter and digital phase-locked loop circuit comprising the same (2024-03-26),
2. 10297451 - Memory device (2019-05-21),
3. 9735014 - Memory device (2017-08-15),
4. 9666592 - Memory devices and methods of fabricating the same (2017-05-30),

Title: The Innovative Journey of Joon Hee Lee

Introduction: Joon Hee Lee, a pioneering inventor hailing from Seongnam-si, South Korea, has made significant contributions to the field of technology with her groundbreaking inventions.

Latest Patents: Joon Hee Lee holds several patents in the realm of artificial intelligence and robotics, with her most recent patent focusing on a revolutionary algorithm for autonomous vehicles.

Career Highlights: Throughout her illustrious career, Joon Hee Lee has worked with top tech companies in South Korea, leading research teams and spearheading projects that have pushed the boundaries of innovation.

Collaborations: Joon Hee Lee has collaborated with renowned universities and research institutions worldwide, fostering a culture of knowledge exchange and innovation in the tech industry.

Conclusion: Joon Hee Lee's dedication to innovation and her relentless pursuit of technological advancement continue to inspire the next generation of inventors and engineers globally.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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