Company Filing History:
Years Active: 2025
Title: Joohyun Jin: Innovator in Three-Dimensional NAND Memory Technology
Introduction
Joohyun Jin is a prominent inventor based in Wuhan, China. He has made significant contributions to the field of memory technology, particularly in the development of three-dimensional NAND memory devices. His innovative work has garnered attention in the tech industry, showcasing his expertise and dedication to advancing memory technology.
Latest Patents
Joohyun Jin holds a patent for his invention titled "Programming for three-dimensional NAND memory." This patent describes a memory device that includes selected word lines coupled to first memory cells, a first group of unselected word lines coupled to second memory cells, and a second group of unselected word lines coupled to third memory cells. The peripheral circuit associated with this device is designed to apply program voltages on the selected word lines, as well as first and second pass voltages on the unselected word lines. Notably, the first maximum value of the first pass voltages differs from the second maximum value of the second pass voltages. This innovation is crucial for enhancing the performance and efficiency of NAND memory devices.
Career Highlights
Joohyun Jin is currently employed at Yangtze Memory Technologies Co., Ltd., where he continues to push the boundaries of memory technology. His work at this leading company has positioned him as a key player in the development of advanced memory solutions. With a focus on innovation, he has contributed to the company's reputation for excellence in the semiconductor industry.
Collaborations
Throughout his career, Joohyun Jin has collaborated with talented individuals such as Haibo Li and Chao Zhang. These partnerships have fostered a creative environment that encourages the exchange of ideas and the development of groundbreaking technologies.
Conclusion
Joohyun Jin's contributions to three-dimensional NAND memory technology exemplify his commitment to innovation and excellence. His patent and work at Yangtze Memory Technologies Co., Ltd. highlight his role as a leading inventor in the field. As technology continues to evolve, his advancements will undoubtedly play a significant role in shaping the future of memory devices.