Suwon, South Korea

Jonghyun Hwang

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jonghyun Hwang. Retrieved from https://idiyas.com/inventor/jonghyun-hwang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Jonghyun Hwang and Semiconductor Overlay Improvement

Introduction

Jonghyun Hwang is an inventor associated with Suwon, South Korea, and Samsung Electronics Co., Ltd. His patent work addresses overlay accuracy in semiconductor manufacturing.

Latest Patents

The provided information lists one patent for Hwang: “Overlay Improvement Method, and Method of Manufacturing Semiconductor Device Comprising Overlay Improvement Method.” The invention describes measuring overlay misalignment, converting the measurements into overlay parameters, and applying conversion logic to produce aberration input data for an exposure machine. It focuses on correcting higher-order components of third order or greater in two perpendicular directions relative to a slit, with the aim of improving overlay accuracy during semiconductor-device fabrication. The listed total is 1 patent.

Career Highlights

Hwang’s listed patent connects his work with semiconductor lithography and exposure-process control at Samsung Electronics Co., Ltd. The invention’s approach uses measured misalignment and machine-applied corrections to address complex overlay errors.

Collaborations

Jaeil Lee is identified in the provided information as Hwang’s coworker. No further details about their specific collaboration are provided.

Conclusion

Jonghyun Hwang’s listed invention focuses on correcting higher-order overlay errors in semiconductor manufacturing, reflecting the importance of precise exposure control in device fabrication.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…