The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 21, 2026

Filed:

Dec. 07, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jonghyun Hwang, Suwon-si, KR;

Jaeil Lee, Suwon-si, KR;

Kyoungcho Na, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/70 (2012.01); G03F 7/00 (2006.01); H10P 74/20 (2026.01);
U.S. Cl.
CPC ...
G03F 1/70 (2013.01); G03F 7/70504 (2023.05); G03F 7/70508 (2013.01); G03F 7/70516 (2013.01); G03F 7/706 (2013.01); H10P 74/203 (2026.01);
Abstract

An overlay correction method for improving an overlay parameter of an ultra-high order component includes: obtaining misalignment components of an overlay through measurement; converting the misalignment components into overlay parameters; applying a conversion logic between the overlay parameters; converting the overlay parameters into aberration input data; and performing an exposure process by applying the aberration input data to an exposure machine, wherein the overlay parameters are divided into a first overlay parameter shifting in a first direction that is an extending direction of a slit, and a second overlay parameter shifting in a second direction that is perpendicular to the first direction, and the performing of the exposure process includes correcting the first and second overlay parameters including a higher-order component of a 3rd order or greater with respect to a location of the slit in the first direction.


Find Patent Forward Citations

Hwang, Jonghyun. (2026). Overlay improvement method, and method of manufacturing semiconductor device comprising overlay improvement method (U.S. Patent No. 12687774). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12687774

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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