Hwaseong-si, South Korea

Jonghyun Ahn

This inventor holds 2 USPTO granted patents. Top assignee: Asm IP Holding B.v.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jonghyun Ahn. Retrieved from https://idiyas.com/inventor/jonghyun-ahn-n3gnw2i6

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 6.0


Company Filing History:


Years Active: 2026

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2 patents (USPTO):Explore Patents

Title: Jonghyun Ahn: Innovator in Semiconductor Technology

Introduction

Jonghyun Ahn is a notable inventor based in Hwaseong-si, South Korea. He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approaches to enhancing semiconductor processes.

Latest Patents

One of Jonghyun Ahn's latest patents is a method for filling a gap in a three-dimensional structure on a semiconductor substrate. This application relates to a method of filling a gap in a three-dimensional structure over a semiconductor substrate. The method includes depositing a thin film at least on a three-dimensional structure over a substrate using at least one reaction gas activated with a first radio frequency (RF) power having a first frequency. The three-dimensional structure comprises a trench and/or hole. The method also includes etching the deposited thin film using at least one etchant activated with a second RF power having a second frequency lower than the first frequency. The method may further include repeating a cycle of the depositing and the etching at least once until the trench and/or hole are filled with the thin film. According to some embodiments, a thin film having substantially free of voids and/or seams can be formed in the three-dimensional structure.

Another significant patent is a method for seasoning a chamber. This method provides a process for seasoning a reactor in which a dry cleaning step and a first seasoning step are carried out at the first temperature, followed by raising the temperature to a second temperature. The method also comprises a second seasoning step and a substrate processing step carried out at the second temperature. The seasoning step suppresses dry cleaning byproducts from evaporating, spreading, and re-spreading in a reactor. Thus, it prevents the deterioration of the film quality deposited on a substrate, extending the wet etch cycle of the reactor and improving the uptime and efficiency of the reactor.

Career Highlights

Jonghyun Ahn is currently employed at ASML Holding B.V., a leading company in the semiconductor industry. His work focuses on developing innovative methods that enhance the efficiency and quality of semiconductor manufacturing processes.

Collaborations

He collaborates with talented coworkers, including KiKang Kim and YongWoong Jeong, who contribute to the advancement of their projects and innovations.

Conclusion

Jonghyun Ahn's contributions to semiconductor technology through his

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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