Jong Wook Lee

Title: Innovations of Jong Wook Lee in Semiconductor Technology

Introduction

Jong Wook Lee is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of MOSFETs. His innovative approach has led to advancements that enhance the performance and reliability of electronic devices.

Latest Patents

Jong Wook Lee holds a patent for a MOSFET formed on a silicon-on-insulator substrate. This invention addresses the challenge of preventing parasitic resistance increases in source and drain regions of FETs with thin-film SOI layers. The method allows for the realization of elevated layers on the source and drain regions without the need for lithography processes, thus minimizing the risk of short circuits. The design includes element-isolation insulating films that are taller than the semiconductor layer, with gate electrodes also elevated above these films. The process involves depositing a polycrystalline silicon film and forming elevated layers on the source and drain regions through chemical-mechanical polishing and etching back. Silicide layers are created on the gate electrode and elevated layers, followed by the formation of an interlayer insulating film and a metal electrode.

Career Highlights

Jong Wook Lee is associated with NEC Corporation, where he has been instrumental in advancing semiconductor technologies. His work has not only contributed to the company's portfolio but has also influenced the broader field of electronics.

Collaborations

Jong Wook Lee collaborates with Hisashi Takemura, working together to push the boundaries of semiconductor innovation.

Conclusion

Jong Wook Lee's contributions to semiconductor technology, particularly through his patented innovations, highlight his role as a key figure in the industry. His work continues to impact the development of more efficient and reliable electronic devices.