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For the Inventor, By the Inventor

Suwon-si, South Korea

Jong-Wan Choi

USPTO Granted Patents = 7 

Average Co-Inventor Count = 4.7

ph-index = 3

Forward Citations = 26(Granted Patents)


Location History:

  • Daejeon-si, KR (2009)
  • Suwon-si, KR (2010 - 2015)

Company Filing History:

goldMedal7 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2009-2015

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7 patents (USPTO):Explore Patents
1. 9040378 - Methods of forming semiconductor devices including vertical channels and semiconductor devices formed using such methods (2015-05-26),
2. 8536652 - Non-volatile memory devices including low-K dielectric gaps in substrates (2013-09-17),
3. 8492223 - Methods of manufacturing flash memory devices by selective removal of nitrogen atoms (2013-07-23),
4. 7858492 - Method of filling a trench and method of forming an isolating layer structure using the same (2010-12-28),
5. 7781304 - Semiconductor device having trench isolation region and methods of fabricating the same (2010-08-24),
6. 7674685 - Semiconductor device isolation structures and methods of fabricating such structures (2010-03-09),
7. 7601588 - Method of forming a trench isolation layer and method of manufacturing a non-volatile memory device using the same (2009-10-13),

Title: Innovations of Jong-Wan Choi

Introduction

Jong-Wan Choi is a prominent inventor based in Suwon-si, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of seven patents. His work focuses on methods for forming advanced semiconductor devices, which are crucial for modern electronics.

Latest Patents

One of Jong-Wan Choi's latest patents involves methods of forming semiconductor devices that include vertical channels. This innovative approach includes creating a stack of insulating and conductive patterns on a substrate. The process allows for the formation of holes that expose the sidewalls of these patterns, enhancing the device's performance. Another notable patent pertains to non-volatile memory devices that utilize low-K dielectric gaps in substrates. This method involves the careful etching of gate insulating and conductive layers to create air gaps, which improve the efficiency of memory devices.

Career Highlights

Jong-Wan Choi is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has positioned him as a key player in the development of cutting-edge semiconductor technologies. His innovative methods have the potential to revolutionize the way semiconductor devices are manufactured.

Collaborations

Throughout his career, Jong-Wan Choi has collaborated with talented individuals such as Ju-seon Goo and Eun-kyung Baek. These collaborations have fostered a creative environment that encourages the development of groundbreaking technologies.

Conclusion

Jong-Wan Choi's contributions to semiconductor technology through his patents and work at Samsung Electronics Co., Ltd. highlight his importance in the field. His innovative methods are paving the way for advancements in electronic devices, showcasing the impact of his work on the industry.

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