This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Intel Ndtm US LLC. Active years: 2026.
Company Filing History:
Years Active: 2026
Title: Innovations of Jong Sun Sel in 3D NAND Technology
Introduction
Jong Sun Sel is a notable inventor based in Liaoning, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of 3D NAND memory structures. His innovative work has led to the filing of a patent that enhances the efficiency and performance of memory devices.
Latest Patents
Jong Sun Sel holds a patent for an invention titled "Additional silicide layer on top of staircase for 3D NAND WL contact connection." This patent describes an apparatus that includes a substrate with a memory array of vertical 3D NAND strings. The invention features a staircase region formed in the substrate, a polysilicon wordline that extends horizontally into this region, and a wordline contact that extends vertically to establish electrical contact with the polysilicon wordline. Additionally, a punch stop layer is positioned between the wordline contact and the polysilicon wordline. This innovative design aims to improve the performance and reliability of 3D NAND memory devices.
Career Highlights
Jong Sun Sel is currently employed at Intel Ndtm US LLC, where he continues to work on advancing semiconductor technologies. His expertise in 3D NAND technology has positioned him as a valuable asset to the company. With a focus on innovation, he has contributed to the development of cutting-edge memory solutions.
Collaborations
Jong Sun Sel collaborates with fellow inventor Junchao Ding, working together to push the boundaries of semiconductor technology. Their combined efforts aim to enhance the performance and efficiency of memory devices in the industry.
Conclusion
Jong Sun Sel's contributions to 3D NAND technology exemplify the spirit of innovation in the semiconductor field. His patent and ongoing work at Intel Ndtm US LLC highlight his commitment to advancing memory technology. The impact of his inventions will likely be felt in the industry for years to come.