Busan, South Korea

Jong Sun Lee

This inventor holds 1 USPTO granted patent. Top assignee: Iucf-Hyu. Active years: 2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jong Sun Lee. Retrieved from https://idiyas.com/inventor/jong-sun-lee-l7xxiwz0

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2017

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1 patent (USPTO):Explore Patents

Title: The Innovative Contributions of Jong Sun Lee

Introduction

Jong Sun Lee is a prominent inventor based in Busan, South Korea. He has made significant strides in the field of nonvolatile memory devices, showcasing his expertise and innovative spirit. His work has the potential to impact various technological applications, particularly in data storage solutions.

Latest Patents

Jong Sun Lee holds a patent for a nonvolatile memory device. This device includes first and second electrodes that are spaced from each other, at least one nano crystal layer positioned between these electrodes, and first and second material layers that are asymmetrically formed. These material layers possess a bistable conductive property, enhancing the functionality of the memory device.

Career Highlights

Lee is associated with Iucf-Hyu, where he continues to develop cutting-edge technologies. His dedication to innovation is evident in his patent, which reflects his commitment to advancing the field of memory devices.

Collaborations

Throughout his career, Jong Sun Lee has collaborated with notable colleagues, including Jea Gun Park and Sung Ho Seo. These partnerships have fostered a creative environment that encourages the exchange of ideas and technological advancements.

Conclusion

Jong Sun Lee's contributions to the field of nonvolatile memory devices exemplify his innovative mindset and dedication to technology. His work not only enhances current memory solutions but also paves the way for future advancements in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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