The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2017
Filed:
Jul. 27, 2012
Applicants:
Jea Gun Park, Seongnam-Si, KR;
Sung Ho Seo, Seoul, KR;
Woo Sik Nam, Seoul, KR;
Jong Sun Lee, Busan, KR;
Inventors:
Jea Gun Park, Seongnam-Si, KR;
Sung Ho Seo, Seoul, KR;
Woo Sik Nam, Seoul, KR;
Jong Sun Lee, Busan, KR;
Assignee:
IUCF-HYU, , KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 51/05 (2006.01); B82Y 10/00 (2011.01); H01L 27/10 (2006.01); G11C 11/56 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0591 (2013.01); B82Y 10/00 (2013.01); G11C 11/5664 (2013.01); G11C 13/0014 (2013.01); H01L 27/101 (2013.01); G11C 2213/15 (2013.01);
Abstract
Provided is a nonvolatile memory device. The nonvolatile memory device includes: first and second electrodes spaced from each other; at least one nano crystal layer disposed between the first and second electrodes; and first and second material layers respectively disposed between the first and second electrodes and the nano crystal layer and having a bistable conductive property, wherein the first and second material layers are formed asymmetrical to each other.