Suwon, South Korea

Jong Sun Lee

This inventor holds 1 USPTO granted patent and 3 published patent applications. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jong Sun Lee. Retrieved from https://idiyas.com/inventor/jong-sun-lee-55w09s8i

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 8.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Jong Sun Lee: Semiconductor Device Fabrication Inventor

Introduction

Jong Sun Lee is an inventor based in Suwon, South Korea. His listed patent work concerns a method for fabricating a semiconductor device, and he is associated with Samsung Electronics Ltd.

Latest Patents

Lee’s listed patent is “Method for Fabricating Semiconductor Device.” The method describes forming a mask layer on a substrate, with a through hole that exposes the substrate’s upper surface. The mask layer includes a first mask layer and a second, carbon-containing mask layer positioned between the substrate and the first mask layer. It also describes forming a liner layer along the side walls of the through hole within the second mask layer. Lee is credited with 1 patent in the provided information.

Career Highlights

The available information identifies Lee’s work in semiconductor device fabrication and his association with Samsung Electronics Ltd. The patent describes a process involving layered masks and a carbon-containing layer.

Collaborations

Heung Sik Park and John Soo Kim are listed as Lee’s coworkers. The provided information does not specify their roles in the patent or describe particular collaborations.

Conclusion

Jong Sun Lee’s listed patent focuses on a mask-and-liner process for semiconductor device fabrication, reflecting his documented work in semiconductor technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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