This inventor holds 4 USPTO granted patents. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2004-2007.
Location History:
- Suwon, KR (2004 - 2005)
- Suwon-si, KR (2005)
- Gyeonggi-do, KR (2007)
Company Filing History:
Years Active: 2004-2007
Title: Jong-Sik Chun: Innovator in Semiconductor Technology
Introduction
Jong-Sik Chun is a prominent inventor based in Suwon, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on enhancing the efficiency and performance of semiconductor devices.
Latest Patents
Among his latest patents is the "Dual gate oxide structure in semiconductor device and method thereof." This patent describes a method for manufacturing a dual gate oxide layer on a semiconductor substrate, which includes first and second active regions operating at different voltages. The method aims to improve cell current and prevent issues caused by stepped coverage and boundary face dents. Another notable patent is the "Method of forming a contact in a semiconductor device." This patent outlines a process for creating a contact in a semiconductor device by forming a contact hole in an insulating layer and depositing various metal layers to ensure effective contact formation.
Career Highlights
Jong-Sik Chun is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His innovative work has contributed to the advancement of semiconductor technologies, making him a valuable asset to his organization.
Collaborations
He has collaborated with notable coworkers, including In-Sun Park and Jong-Myeong Lee, further enhancing the innovative environment at Samsung Electronics.
Conclusion
Jong-Sik Chun's contributions to semiconductor technology through his patents and work at Samsung Electronics Co., Ltd. highlight his role as a key innovator in the field. His efforts continue to shape the future of semiconductor devices.