The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2005
Filed:
Sep. 09, 2003
Hong-mi Park, Seoul, KR;
Jong-sik Chun, Suwon, KR;
Hyeon-deok Lee, Seoul, KR;
In-sun Park, Yongin, KR;
Jong-myeong Lee, Sungnam, KR;
Ju-cheol Shin, Seoul, KR;
Hong-Mi Park, Seoul, KR;
Jong-Sik Chun, Suwon, KR;
Hyeon-Deok Lee, Seoul, KR;
In-Sun Park, Yongin, KR;
Jong-Myeong Lee, Sungnam, KR;
Ju-Cheol Shin, Seoul, KR;
Samsung Electronics Co., Ltd, Suwon-Si, KR;
Abstract
In a method of forming a contact in a semiconductor device, an insulating layer is formed on the semiconductor substrate. Then, a contact hole is formed by selectively etching the insulating layer. A barrier metal layer is deposited on side and bottom surfaces of the contact hole and on a top surface of the insulating layer to a uniform thickness. A wetting layer of an oxidation-resistive metal material is deposited on the barrier metal layer. A metal layer is formed on the wetting layer and fills the contact hole to thereby form a contact in the semiconductor device.