Suwon, Japan

Jong-Seon Ahn

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2009.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jong-Seon Ahn. Retrieved from https://idiyas.com/inventor/jong-seon-ahn-ujqy6a7i

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 9.0

ph-index = 1


Company Filing History:


Years Active: 2009

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1 patent (USPTO):Explore Patents

Title: Jong-Seon Ahn: Innovator in Semiconductor Technology

Introduction

Jong-Seon Ahn is a prominent inventor based in Suwon, Japan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a patented semiconductor device and its manufacturing method.

Latest Patents

Jong-Seon Ahn holds a patent for a semiconductor device and method of manufacturing the same. This invention involves the formation of a punch-through prevention film pattern and a channel film pattern on an insulation layer. The punch-through prevention pattern and the insulation layer may include nitride and oxide, respectively. Notably, the punch-through prevention pattern is strategically located under the channel pattern. This innovation enhances the performance and reliability of semiconductor devices.

Career Highlights

Ahn is currently employed at Samsung Electronics Co., Ltd., a leading global technology company. His work at Samsung has allowed him to be at the forefront of semiconductor research and development. His expertise in this area has contributed to the advancement of technology in various applications.

Collaborations

Throughout his career, Jong-Seon Ahn has collaborated with talented individuals such as Jin-Hong Kim and Kyung-Tae Jang. These collaborations have fostered a creative environment that encourages innovation and the sharing of ideas.

Conclusion

Jong-Seon Ahn is a notable inventor whose work in semiconductor technology has made a lasting impact. His patent reflects his commitment to advancing the field and improving device performance. His contributions continue to influence the industry and inspire future innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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