The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2009
Filed:
Jun. 05, 2006
Jong-seon Ahn, Suwon-si, JP;
Joon Kim, Seoul, KR;
Jin-hong Kim, Suwon-si, KR;
Suk-chul Bang, Yongin-si, KR;
Eun-kuk Chung, Seoul, KR;
Hyung-mo Yang, Seoul, KR;
Chang-yeon Yoo, Seoul, KR;
Yun-seung Kang, Seoul, KR;
Kyung-tae Jang, Seoul, KR;
Jong-Seon Ahn, Suwon-si, JP;
Joon Kim, Seoul, KR;
Jin-Hong Kim, Suwon-si, KR;
Suk-Chul Bang, Yongin-si, KR;
Eun-Kuk Chung, Seoul, KR;
Hyung-Mo Yang, Seoul, KR;
Chang-Yeon Yoo, Seoul, KR;
Yun-Seung Kang, Seoul, KR;
Kyung-Tae Jang, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
In a semiconductor device and method of manufacturing the semiconductor device, a punch-through prevention film pattern and a channel film pattern are formed on an insulation layer. The punch-through prevention pattern and the insulation layer may include nitride and oxide, respectively. The punch-through prevention pattern is located under the channel pattern.