Kyungki-do, South Korea

Jong-ryeol Yoo

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2009.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jong-ryeol Yoo. Retrieved from https://idiyas.com/inventor/jong-ryeol-yoo-i1xbxa67

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2009

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1 patent (USPTO):Explore Patents

Title: Innovations by Jong-ryeol Yoo in DRAM Semiconductor Technology

Introduction

Jong-ryeol Yoo is a prominent inventor based in Kyungki-do, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the development of DRAM devices. His innovative approaches have led to advancements that enhance the performance and efficiency of these critical components in modern electronics.

Latest Patents

Jong-ryeol Yoo holds a patent for "Methods for fabricating DRAM semiconductor devices including silicon epitaxial and metal silicide layers." This patent describes a method for fabricating DRAM semiconductor devices that includes forming a silicon epitaxial layer on the source/drain region of both the cell region and the peripheral circuit region using selective epitaxial growth (SEG). This process results in a raised active region, which is crucial for improving device performance. Additionally, the patent outlines the formation of a metal silicide layer and a metal pad on the silicon epitaxial layer in the source/drain region of the cell region. This innovation allows for the creation of a shallow junction region, which reduces leakage current and lowers contact resistance with the source/drain region.

Career Highlights

Jong-ryeol Yoo is currently employed at Samsung Electronics Co., Ltd., a leading global technology company. His work at Samsung has positioned him at the forefront of semiconductor research and development. Yoo's expertise in DRAM technology has contributed to the company's reputation for innovation and excellence in the electronics industry.

Collaborations

Throughout his career, Jong-ryeol Yoo has collaborated with notable colleagues, including Chul-sung Kim and Byeong-chan Lee. These collaborations have fostered a productive environment for innovation and have led to significant advancements in semiconductor technology.

Conclusion

Jong-ryeol Yoo's contributions to the field of DRAM semiconductor devices exemplify the impact of innovative thinking in technology. His patented methods not only enhance device performance but also pave the way for future advancements in the semiconductor industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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