Gyeonggi-do, South Korea

Jong Moon Kim

This inventor holds 1 USPTO granted patent. Top assignee: Soulbrain Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jong Moon Kim. Retrieved from https://idiyas.com/inventor/jong-moon-kim-0n0cx65a

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Jong Moon Kim: Semiconductor Thin-Film Innovation

Introduction

Jong Moon Kim is an inventor based in Gyeonggi-do, South Korea, and is associated with Soulbrain Co., Ltd. His patent work concerns semiconductor manufacturing, particularly methods for forming thin films on substrates with complex structures.

Latest Patents

The provided information lists 1 patent for Kim: “Activator, Method of Forming Thin Film Using Activator, Semiconductor Substrate Fabricated Using Method, and Semiconductor Device Including Semiconductor Substrate.”

The invention describes an activator containing a compound with a predetermined structure. It is designed to replace ligands on an adsorbed precursor effectively, improving the reaction rate while controlling thin-film growth. The method aims to improve step coverage and film-thickness uniformity on complex substrates while reducing impurities.

Career Highlights

Kim’s listed patent reflects work on processes relevant to semiconductor substrate fabrication and semiconductor devices. The invention focuses on addressing thin-film deposition challenges, including uniform coverage across intricate structures.

Collaborations

The provided information names Seung Hyun Lee and Jae Sun Jung as Kim’s coworkers. Their specific roles in the patent or related work are not stated.

Conclusion

Jong Moon Kim’s listed invention addresses thin-film formation for semiconductor manufacturing, with an emphasis on improved coverage, thickness uniformity, and impurity reduction.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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