The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2026

Filed:

Mar. 17, 2023
Applicant:

Soulbrain Co., Ltd., Gyeonggi-do, KR;

Inventors:

Seung Hyun Lee, Gyeonggi-do, KR;

Jae Sun Jung, Gyeonggi-do, KR;

Chang Bong Yeon, Gyeonggi-do, KR;

Jong Moon Kim, Gyeonggi-do, KR;

Assignee:

SOULBRAIN CO., LTD., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45553 (2013.01);
Abstract

The present invention relates to an activator, a method of forming a thin film using the activator, a semiconductor substrate fabricated using the method, and a semiconductor device including the semiconductor substrate. According to the present invention, by providing a compound having a predetermined structure as an activator, the reaction rate may be improved by effectively replacing the ligands of an adsorbed precursor, and the thin film growth rate may be appropriately reduced. Thus, even when forming a thin film on a substrate with a complex structure, step coverage and the thickness uniformity of a thin film may be greatly improved, and impurities may be reduced.


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Lee, Seung. (2026). Activator, method of forming thin film using activator, semiconductor substrate fabricated using method, and semiconductor device including semiconductor substrate (U.S. Patent No. 12768042). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12768042

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