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For the Inventor, By the Inventor

Gyeonggi-do, South Korea

Jong-hyun Choi

This inventor holds 36 USPTO granted patents and 1 EPO patent, primarily in Semiconductor Memory. Top assignees: Samsung Electronics Co., Ltd., Skhynix Inc.. Active years: 2002-2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jong-hyun Choi. Retrieved from https://idiyas.com/inventor/jong-hyun-choi-gcgrb9xd

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 36

% Patents Active = 77.8

 

Average Co-Inventor Count = 3.1

ph-index = 11

Forward Citations = 515(Granted Patents)


Location History:

  • Kyunggi-do, KR (2002 - 2003)
  • Kyungki-do, KR (2002 - 2003)
  • Suwon, KR (2002 - 2006)
  • Gyeonggi-do, KR (2007 - 2019)

Company Filing History:

goldMedal35 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents
silverMedal1 out of 11,678 
 
Skhynix Inc.
 patents

Years Active: 2002-2019

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Areas of Expertise:
DRAM Devices
Refresh Cycles
Semiconductor Memory
Sense Amplifiers
Integrated Circuits
Voltage Control
Input/Output Circuits
Memory Repair Methods
Programming Addresses
Chip Selection
Dynamic Memory
36 patents (USPTO):Explore Patents
1. 10374479 - Motor (2019-08-06),
2. 9984885 - Non-volatile memory device and method for fabricating the same (2018-05-29),
3. 8537633 - Methods of operating DRAM devices having adjustable internal refresh cycles that vary in response to on-chip temperature changes (2013-09-17),
4. 8218137 - Methods of operating DRAM devices having adjustable internal refresh cycles that vary in response to on-chip temperature changes (2012-07-10),
5. 7843752 - Circuit and method for controlling refresh periods in semiconductor memory devices (2010-11-30),
6. 7710807 - Sense amplifiers having MOS transistors therein with different threshold voltages and/or that support different threshold voltage biasing (2010-05-04),
7. 7646653 - Driver circuits for integrated circuit devices that are operable to reduce gate induced drain leakage (GIDL) current in a transistor and methods of operating the same (2010-01-12),
8. 7397281 - Input/output circuit of semiconductor memory device and input/output method thereof (2008-07-08),
9. 7394290 - Semiconductor integrated circuit (2008-07-01),
10. 7345939 - Sense amplifiers having MOS transistors therein with different threshold voltages and/or that support different threshold voltage biasing (2008-03-18),
11. 7339843 - Methods and circuits for programming addresses of failed memory cells in a memory device (2008-03-04),
12. 7330384 - Verifying circuit and method of repairing semiconductor device (2008-02-12),
13. 7259978 - Semiconductor memory devices and signal line arrangements and related methods (2007-08-21),
14. 7242602 - Semiconductor memory devices having conductive line in twisted areas of twisted bit line pairs (2007-07-10),
15. 7230475 - Semiconductor devices including an external power voltage control function and methods of operating the same (2007-06-12),

Title: Innovations and Contributions of Jong-hyun Choi

Introduction: Jong-hyun Choi, an accomplished inventor residing in Gyeonggi-do, South Korea, has made significant contributions to the field of technology with a remarkable portfolio of 36 patents. His innovative work spans various domains, particularly in motor design and memory devices, which showcase his expertise in engineering and technology.

Latest Patents: Among Jong-hyun Choi's most recent inventions is a patented motor design, which encompasses a rotor and a stator that houses a multitude of teeth extending towards the rotor. This design includes multiple insulating films positioned in the slots created between the teeth, effectively insulating the coil that is wound around them. Additionally, insulating members are strategically placed to cover the stator's upper and lower sections, ensuring the stability of the insulating films thanks to the engagement with the teeth. Another noteworthy patent pertains to a non-volatile memory device, which features a first well of a first conductive type over a substrate and a second well of a second conductive type that contacts the first. This design includes a trench bordering where the two wells meet, along with a memory gate that has a memory layer and a gate electrode that fill the trench above it.

Career Highlights: Jong-hyun Choi has shaped his career at renowned companies such as Samsung Electronics Co., Ltd. and SK hynix Inc. These experiences have solidified his reputation as a leading innovator in the industry, allowing him to leverage state-of-the-art technology for future advancements.

Collaborations: Throughout his career, Jong-hyun has had the opportunity to collaborate with talented colleagues, including Sang-Seok Kang and Young-Hun Seo. These partnerships have enriched his work and contributed to the development of groundbreaking inventions.

Conclusion: Jong-hyun Choi's impressive array of patents and his dedication to innovation underscore his significant impact on technology. As he continues to pioneer advancements in motor and memory device technology, his contributions pave the way for future developments in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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