The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2018
Filed:
May. 22, 2014
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventors:
Heon-Joon Kim, Gyeonggi-do, KR;
Jong-Hyun Choi, Gyeonggi-do, KR;
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01); H01L 21/28 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28282 (2013.01); H01L 29/42352 (2013.01); H01L 29/66833 (2013.01); H01L 29/792 (2013.01);
Abstract
A non-volatile memory device may include a first well of a first conductive type formed over a substrate, a second well of a second conductive type formed over the substrate to contact the first well, a trench formed over the substrate on a border formed by the contact of the first well and the second well, and a memory gate having a memory layer formed over a surface of the trench, and a gate electrode formed to fill the trench over the memory layer.
Kim, Heon-Joon. (2018). Non-volatile memory device and method for fabricating the same (U.S. Patent No. 9984885). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9984885
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