This inventor holds 2 USPTO granted patents. Top assignee: Samsung Electro-Mechanics Co., Ltd.. Active years: 2007-2010.
Company Filing History:
Years Active: 2007-2010
Title: The Innovative Contributions of Jong Hak Won
Introduction
Jong Hak Won is a prominent inventor based in Kyungki-do, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in nitride semiconductor devices. With a total of 2 patents to his name, his work has garnered attention in the industry.
Latest Patents
Jong Hak Won's latest patents include a nitride semiconductor device and a group III-nitride light emitting device. The nitride semiconductor device features first and second conductivity type nitride layers, with an active layer that includes at least one quantum barrier layer and one quantum well layer. Additionally, a current spreading layer is interposed between the first conductivity type nitride layer and the active layer, which has an In content greater than that of the quantum well layer. The group III-nitride light emitting device is designed to improve operating voltage and electrostatic discharge characteristics. It comprises a lower n-type clad layer, a current spreading layer, an upper n-type clad layer, an active layer, and a p-type clad layer, all formed in sequence on a substrate.
Career Highlights
Jong Hak Won is currently employed at Samsung Electro-Mechanics Co., Ltd., where he continues to innovate in the field of semiconductor technology. His work has been instrumental in advancing the capabilities of nitride semiconductor devices.
Collaborations
He has collaborated with notable coworkers, including Soo Han Kim and Joong Seo Kang, contributing to various projects that enhance the performance of semiconductor devices.
Conclusion
Jong Hak Won's contributions to semiconductor technology through his patents and work at Samsung Electro-Mechanics Co., Ltd. highlight his role as an influential inventor in the industry. His innovative designs continue to pave the way for advancements in this critical field.