Samsung Electro-mechanics Co., Ltd.

Jong Hak Won

Hyun Wook Shim

Jae Woong Han

Suk Kil Yoon

Seong Suk Lee

Joong Seo Kang

Soo Han Kim

A nitride semiconductor device is provided. In the device, first and second conductivity type nitride layers are formed. An active layer is formed between the first and second conductivity type nitride layers. The active layer includes at least one quantum barrier layer and at least one quantum well layer. Also, a current spreading layer is interposed between the first conductivity type nitride layer and the active layer. The current spreading layer has an In content greater than the quantum well layer of the active layer.

Nitride semiconductor device

The present invention provides a group III-nitride light emitting device improved in operating voltage and electrostatic discharge characteristics. The group III-nitride light emitting device comprises a lower n-type clad layer, a current spreading layer, an upper n-type clad layer, an active layer and an p-type clad layer formed in their order on a substrate. The current spreading layer includes a SiC layer.

Group III-nitride light emitting device

Growing community of inventors

Kyungki-do, South Korea

Jong Hak Won