This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2006.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2006
Title: Jong-gul Yoon: Innovator in Ferroelectric Capacitors
Introduction
Jong-gul Yoon is a prominent inventor based in Suwon, South Korea. He is known for his significant contributions to the field of ferroelectric materials and capacitors. His innovative work has led to advancements in memory technology, particularly in improving the reliability of ferroelectric random access memory (FRAM).
Latest Patents
Jong-gul Yoon holds a patent for a ferroelectric capacitor and a method for manufacturing the same. This invention includes a lower electrode, a dielectric layer, and an upper electrode layer, which are sequentially stacked. The dielectric layer features a multi-layer structure that consists of several sequentially stacked ferroelectric films. Notably, two adjacent ferroelectric films have either different compositions or different composition ratios. This design allows for stable polarization states of ferroelectric domains, ensuring that data written in the ferroelectric capacitor can be retained accurately over time. His patent is crucial for enhancing the performance and reliability of FRAM technology. He has 1 patent to his name.
Career Highlights
Jong-gul Yoon is currently employed at Samsung Electronics Co., Ltd., where he continues to push the boundaries of innovation in electronic components. His work at Samsung has positioned him as a key player in the development of advanced memory technologies.
Collaborations
Throughout his career, Jong-gul Yoon has collaborated with talented individuals such as Sang-min Shin and Yong-kyun Lee. These collaborations have fostered a creative environment that has led to groundbreaking advancements in their respective fields.
Conclusion
Jong-gul Yoon's contributions to the field of ferroelectric capacitors exemplify the impact of innovative thinking in technology. His work not only enhances memory reliability but also paves the way for future advancements in electronic components.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
