The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2006
Filed:
Feb. 04, 2004
Sang-min Shin, Seongnam, KR;
Yong-kyun Lee, Yongin, KR;
Bo-soo Kang, Seoul, KR;
Tae-won Noh, Seoul, KR;
Jong-gul Yoon, Suwon, KR;
Sang-min Shin, Seongnam, KR;
Yong-kyun Lee, Yongin, KR;
Bo-soo Kang, Seoul, KR;
Tae-won Noh, Seoul, KR;
Jong-gul Yoon, Suwon, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A ferroelectric capacitor and a method for manufacturing the same includes a lower electrode, a dielectric layer, and an upper electrode layer, which are sequentially stacked, wherein the dielectric layer has a multi-layer structure including a plurality of sequentially stacked ferroelectric films, and wherein two adjacent ferroelectric films have either different compositions or different composition ratios. Use of a ferroelectric capacitor according to an embodiment of the present invention, it is possible to hold stable polarization states of ferroelectric domains for a long retention time, and thus data written in the ferroelectric capacitor a long time ago can be accurately written, thereby improving the reliability of a ferroelectric random access memory (FRAM).