Icheon, South Korea

Jong Bum Park

This inventor holds 1 USPTO granted patent. Top assignee: Hynix Semiconductor Inc.. Active years: 2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jong Bum Park. Retrieved from https://idiyas.com/inventor/jong-bum-park-lgcvln07

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2010

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Jong Bum Park: Innovator in Semiconductor Technology

Introduction

Jong Bum Park is a notable inventor based in Icheon-si, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the fabrication of capacitors.

Latest Patents

Jong Bum Park holds a patent for a "Method for fabricating capacitor of semiconductor device." This innovative method involves several steps, including the formation of a first insulation layer with a storage node plug on a semiconductor substrate. The process continues with the creation of an etch stop layer and a second insulation layer, followed by selective etching to expose a portion of the storage node plug. The method also includes the formation of a barrier metal layer and a storage node electrode, culminating in the addition of a dielectric layer and a metal layer for a plate electrode.

Career Highlights

Jong Bum Park is currently employed at Hynix Semiconductor Inc., a leading company in the semiconductor industry. His work has been instrumental in advancing the technology used in semiconductor devices.

Collaborations

He has collaborated with notable coworkers, including Hyung Bok Choi and Kee Jeung Lee, contributing to various projects within the company.

Conclusion

Jong Bum Park's innovative methods in semiconductor fabrication highlight his expertise and commitment to advancing technology in this critical field. His contributions continue to influence the development of semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…