The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 2010
Filed:
Jun. 15, 2005
Hyung Bok Choi, Yongin-si, KR;
Jong Bum Park, Icheon-si, KR;
Kee Jeung Lee, Seoul, KR;
Jong Min Lee, Suwon-Si, KR;
Hyung Bok Choi, Yongin-si, KR;
Jong Bum Park, Icheon-si, KR;
Kee Jeung Lee, Seoul, KR;
Jong Min Lee, Suwon-Si, KR;
Hynix Semiconductor Inc., Icheon-si, KR;
Abstract
A method for forming a capacitor of a semiconductor device includes forming a first insulation layer having a storage node plug on a semiconductor substrate; forming an etch stop layer and a second insulation layer sequentially on the substrate having the first insulation layer; forming a hole exposing a portion of the storage node plug by selectively etching the second insulation layer by using the etch stop layer; recessing a portion of the storage node plug exposed by the hole; forming a barrier metal layer on a surface of the recessed storage node plug; forming a storage node electrode connected to the storage node plug through the barrier metal layer in the hole; and forming a dielectric layer and a metal layer for a plate electrode sequentially on the storage node electrode.