Colorado Springs, CO, United States of America

Jonathan Lachman

This inventor holds 2 USPTO granted patents. Top assignee: Cypress Semiconductor Corporation. Active years: 2020-2021.


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2020-2021

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2 patents (USPTO):Explore Patents

Title: Innovations by Jonathan Lachman

Introduction

Jonathan Lachman is an accomplished inventor based in Colorado Springs, CO (US). He has made significant contributions to the field of semiconductor memory technology. With a total of 2 patents, Lachman continues to push the boundaries of innovation in his area of expertise.

Latest Patents

Lachman's latest patents include a ferroelectric random access memory sensing scheme. This invention provides semiconductor memory devices and methods of operating the same. The method of operation involves selecting a ferroelectric memory cell for a read operation, coupling a first pulse signal to interrogate the selected ferroelectric memory cell, and outputting a memory signal to a bit-line in response to the first pulse signal. The memory signal is then coupled to a first input of a sense amplifier via the bit-line, while electrically isolating the sense amplifier from the selected ferroelectric memory cell. The sense amplifier is enabled for sensing after being electrically isolated from the selected ferroelectric memory cell. Other embodiments of this invention are also disclosed.

Career Highlights

Jonathan Lachman is currently employed at Cypress Semiconductor Corporation, where he applies his expertise in semiconductor technology. His work has been instrumental in advancing the capabilities of memory devices.

Collaborations

Lachman collaborates with notable professionals in his field, including his coworker Alan D DeVilbiss. Their combined efforts contribute to the innovative projects at Cypress Semiconductor Corporation.

Conclusion

Jonathan Lachman is a prominent inventor whose work in semiconductor memory technology has led to significant advancements. His contributions continue to shape the future of memory devices and their applications.

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