The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 13, 2021

Filed:

Feb. 07, 2020
Applicant:

Cypress Semiconductor Corporation, San Jose, CA (US);

Inventors:

Alan D. DeVilbiss, Colorado Springs, CO (US);

Jonathan Lachman, Colorado Springs, CO (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2006.01); G11C 7/06 (2006.01); G11C 7/08 (2006.01);
U.S. Cl.
CPC ...
G11C 11/2273 (2013.01); G11C 7/06 (2013.01); G11C 7/062 (2013.01); G11C 7/067 (2013.01); G11C 7/08 (2013.01); G11C 11/22 (2013.01); G11C 11/221 (2013.01); G11C 11/2255 (2013.01); G11C 11/2259 (2013.01); G11C 2207/002 (2013.01);
Abstract

Semiconductor memory devices and methods of operating the same are provided. The method of operation may include the steps of selecting a ferroelectric memory cell for a read operation, coupling a first pulse signal to interrogate the selected ferroelectric memory cell, the selected ferroelectric memory cell outputting a memory signal to a bit-line in response to the first pulse signal, coupling the memory signal to a first input of a sense amplifier via the bit-line, electrically isolating the sense amplifier from the selected ferroelectric memory cell, and enabling the sense amplifier for sensing after the sense amplifier is electrically isolated from the selected ferroelectric memory cell. Other embodiments are also disclosed.


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