This inventor holds 1 USPTO granted patent. Top assignee: Advanced Micro Devices Corporation. Active years: 2002.
Company Filing History:
Years Active: 2002
Title: Innovations of Jonathan Kluth
Introduction
Jonathan Kluth is an accomplished inventor based in Sunnyvale, CA. He has made significant contributions to the field of semiconductor technology. His work primarily focuses on enhancing the performance of ultra-thin-body SOI MOS transistors.
Latest Patents
Jonathan holds a patent for a source/drain doping technique for ultra-thin-body SOI MOS transistors. This innovative approach involves an ultra-large-scale integrated (ULSI) circuit that includes MOSFETs on an SOI substrate. The MOSFETs feature elevated source and drain regions that are amorphized before doping. Notably, neutral ion species can be utilized to amorphize these elevated regions. The activation of dopants occurs through a low-temperature rapid thermal anneal process. He has 1 patent to his name.
Career Highlights
Jonathan is currently employed at Advanced Micro Devices Corporation, a leading company in the semiconductor industry. His expertise in semiconductor technology has positioned him as a valuable asset to his team.
Collaborations
Throughout his career, Jonathan has collaborated with talented individuals such as Bin Yu and Emi Ishida. Their combined efforts have contributed to advancements in semiconductor technology.
Conclusion
Jonathan Kluth's innovative work in semiconductor technology exemplifies the impact of dedicated inventors in the field. His contributions continue to shape the future of ultra-thin-body SOI MOS transistors.