The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2002
Filed:
Sep. 16, 1999
Applicant:
Inventors:
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract
An ultra-large-scale integrated (ULSI) circuit includes MOSFETs on an SOI substrate. The MOSFETs include elevated source and drain regions. The elevated source and drain regions are amorphized before doping. Neutral ion species can be utilized to amorphize the elevated source and drain region. Dopants are activated in a low-temperature rapid thermal anneal process.
Yu, Bin. (2002). Source/drain doping technique for ultra-thin-body soi mos transistors (U.S. Patent No. 6403433). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6403433
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile