Jonathan E Faltermeier

Title: Innovations of Jonathan E Faltermeier

Introduction

Jonathan E Faltermeier is an accomplished inventor based in Delanson, NY (US). He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on innovative methods and structures that enhance semiconductor processing.

Latest Patents

Faltermeier's latest patents include "Handler wafer removal by use of sacrificial inert layer" and "FinFET trench circuit." The first patent relates to semiconductor structures and methods of manufacture, specifically addressing the temporary bonding of a semiconductor wafer to a handler wafer during processing. This invention involves forming a sacrificial layer on a handler wafer, which allows for the semiconductor wafer to be processed and later removed using infrared radiation. The second patent, the "FinFET trench circuit," integrates FinFETs with trench capacitors, utilizing a trench top oxide to form larger circuits, such as DRAM arrays.

Career Highlights

Throughout his career, Jonathan has worked with notable companies, including Globalfoundries Inc. and International Business Machines Corporation (IBM). His experience in these leading organizations has contributed to his expertise in semiconductor technologies and innovations.

Collaborations

Faltermeier has collaborated with talented individuals in the field, including Kangguo Cheng and Mukta G Farooq. These collaborations have likely enriched his work and led to further advancements in semiconductor technology.

Conclusion

Jonathan E Faltermeier is a prominent inventor whose work in semiconductor technology has led to valuable patents and innovations. His contributions continue to influence the industry and pave the way for future advancements.