International Business Machines Corporation

Globalfoundries Inc.

Jonathan E Faltermeier

Kangguo Cheng

Veeraraghavan S Basker

Theodorus E Standaert

Mukta G Farooq

Wei Lin

Spyridon Skordas

Kevin R Winstel

The present invention relates generally to semiconductor structures and methods of manufacture and, more particularly, to the temporary bonding of a semiconductor wafer to handler wafer during processing. The semiconductor wafer may be temporarily bonded to the handler wafer by forming a sacrificial layer on a surface of a handler wafer, forming a first dielectric layer on a surface of the sacrificial layer, forming a second dielectric layer on a surface of a semiconductor wafer, and directly bonding the first dielectric layer and the second dielectric layer to form a bonding layer. After the semiconductor wafer is processed, it may be removed from the handler wafer along with the bonding layer by degrading the sacrificial layer with infrared radiation transmitted through the handler wafer.

Handler wafer removal by use of sacrificial inert layer

A finFET trench circuit is disclosed. FinFETs are integrated with trench capacitors by employing a trench top oxide over a portion of the trench conductor. A passing gate is then disposed over the trench top oxide to form a larger circuit, such as a DRAM array. The trench top oxide is formed by utilizing different growth rates between polysilicon and single crystal silicon.

FinFET trench circuit

Growing community of inventors

Delanson, NY, United States of America

Jonathan E Faltermeier