This inventor holds 2 USPTO granted patents and 1 published patent application. Top assignee: University of California. Active years: 2024.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2024
Title: Innovations of Jonas H Kapraun
Introduction
Jonas H Kapraun is a notable inventor based in Albany, CA (US). He has made significant contributions to the field of semiconductor devices, holding 2 patents that showcase his innovative approach to technology.
Latest Patents
One of his latest patents is for a vertical cavity surface emitting device with a buried index guiding current confinement layer. This invention involves a vertical cavity surface emitter device, such as a VCSEL or RC-LED, which contains a buried index-guiding current confinement aperture layer. This layer is grown and lithographically processed to define the position, shape, and dimension of an inner aperture. The aperture allows for both current and optical confinement, leading to higher optical power output and improved thermal conductivity.
Another significant patent by Kapraun focuses on epitaxial growth on a gallium arsenide phosphide capped material on a gallium arsenide substrate. This semiconductor device fabrication method includes a growing process followed by a capping process, where a phosphor-containing material cap layer is deposited over a final GaAs-based layer. This innovative method allows for continued processing without creating an oxide layer on the final GaAs-based layer, enhancing the efficiency of semiconductor device fabrication.
Career Highlights
Kapraun is affiliated with the University of California, where he continues to advance his research and development in semiconductor technologies. His work has contributed to the understanding and improvement of device structures in the semiconductor industry.
Collaborations
Some of his notable coworkers include Constance J Chang-Hasnain and Jiaxing Wang, who have collaborated with him on various projects related to semiconductor innovations.
Conclusion
Jonas H Kapraun's contributions to the field of semiconductor devices through his patents reflect his innovative spirit and dedication to advancing technology. His work continues to influence the industry and inspire future developments.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
