Albany, CA, United States of America

Jonas H Kapraun

This inventor holds 2 USPTO granted patents and 1 published patent application. Top assignee: University of California. Active years: 2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jonas H Kapraun. Retrieved from https://idiyas.com/inventor/jonas-h-kapraun

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 2 

% Patents Active = 100.0

Average Co-Inventor Count = 4.4

ph-index = 1


Company Filing History:


Years Active: 2024

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2 patents (USPTO):Explore Patents

Title: Innovations of Jonas H Kapraun

Introduction

Jonas H Kapraun is a notable inventor based in Albany, CA (US). He has made significant contributions to the field of semiconductor devices, holding 2 patents that showcase his innovative approach to technology.

Latest Patents

One of his latest patents is for a vertical cavity surface emitting device with a buried index guiding current confinement layer. This invention involves a vertical cavity surface emitter device, such as a VCSEL or RC-LED, which contains a buried index-guiding current confinement aperture layer. This layer is grown and lithographically processed to define the position, shape, and dimension of an inner aperture. The aperture allows for both current and optical confinement, leading to higher optical power output and improved thermal conductivity.

Another significant patent by Kapraun focuses on epitaxial growth on a gallium arsenide phosphide capped material on a gallium arsenide substrate. This semiconductor device fabrication method includes a growing process followed by a capping process, where a phosphor-containing material cap layer is deposited over a final GaAs-based layer. This innovative method allows for continued processing without creating an oxide layer on the final GaAs-based layer, enhancing the efficiency of semiconductor device fabrication.

Career Highlights

Kapraun is affiliated with the University of California, where he continues to advance his research and development in semiconductor technologies. His work has contributed to the understanding and improvement of device structures in the semiconductor industry.

Collaborations

Some of his notable coworkers include Constance J Chang-Hasnain and Jiaxing Wang, who have collaborated with him on various projects related to semiconductor innovations.

Conclusion

Jonas H Kapraun's contributions to the field of semiconductor devices through his patents reflect his innovative spirit and dedication to advancing technology. His work continues to influence the industry and inspire future developments.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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