The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 05, 2024

Filed:

Nov. 05, 2020
Applicant:

The Regents of the University of California, Oakland, CA (US);

Inventors:

Constance J. Chang-Hasnain, Palo Alto, CA (US);

Jiaxing Wang, Albany, CA (US);

Kevin T. Cook, Berkeley, CA (US);

Jonas H. Kapraun, Albany, CA (US);

Emil Kolev, Pacifica, CA (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/042 (2006.01); H01S 5/125 (2006.01); H01S 5/183 (2006.01); H01S 5/20 (2006.01); H01S 5/22 (2006.01); H01S 5/227 (2006.01); H01S 5/343 (2006.01);
U.S. Cl.
CPC ...
H01S 5/18308 (2013.01); H01S 5/0424 (2013.01); H01S 5/04256 (2019.08); H01S 5/125 (2013.01); H01S 5/18377 (2013.01); H01S 5/18394 (2013.01); H01S 5/2081 (2013.01); H01S 5/209 (2013.01); H01S 5/2223 (2013.01); H01S 5/2275 (2013.01); H01S 5/3434 (2013.01);
Abstract

A vertical cavity surface emitter device (e.g., VCSEL or RC-LED) containing a buried index-guiding current confinement aperture layer which is grown, and lithographically processed to define position, shape and dimension of an inner aperture. In a regrowth process, the aperture is filled with a single crystalline material from the third contact layer. The aperture provides for both current and optical confinement, while allowing for higher optical power output and improved thermal conductivity.


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