Carrollton, TX, United States of America

John V Spohnheimer


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2017-2018

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2 patents (USPTO):Explore Patents

Title: Innovations by John V Spohnheimer

Introduction

John V Spohnheimer is a notable inventor based in Carrollton, TX (US). He has made significant contributions to the field of semiconductor technology, particularly in the design of vertical power transistors. With a total of 2 patents to his name, Spohnheimer's work has advanced the efficiency and performance of power switching devices.

Latest Patents

One of his latest patents focuses on the "Termination region architecture for vertical power transistors." This innovation involves a vertical power switching device, such as a vertical superjunction metal-oxide-semiconductor field-effect-transistor (MOSFET). The patent describes how termination structures in the corners of the integrated circuit are stretched to efficiently shape the lateral electric field. These structures include features such as doped regions, field plates, insulator films, and high-voltage conductive regions. The edges of these termination structures are designed according to a 2-order smooth, non-circular analytic function, allowing them to extend deeper into the die corner from the core region of the device. Additionally, the patent discloses electrically floating guard rings in the termination region to inhibit triggering of parasitic p-n-p-n structures.

Career Highlights

John V Spohnheimer is currently associated with D3 Semiconductor LLC, where he continues to innovate in the semiconductor industry. His work has been instrumental in enhancing the performance of power transistors, making them more efficient and reliable for various applications.

Collaborations

Throughout his career, Spohnheimer has collaborated with notable professionals in the field, including Thomas E Harrington, III and Zhijun Qu. These collaborations have contributed to the advancement of technology in power switching devices.

Conclusion

John V Spohnheimer's contributions to the field of semiconductor technology, particularly through his patents on vertical power transistors, highlight his innovative spirit and dedication to advancing electrical engineering. His work continues to influence the industry and pave the way for future innovations.

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