John P McCARTEN

Title: John P. McCarten: Innovator in Image Sensor Technology

Introduction

John P. McCarten is an inventor based in Penfield, NY (US). He has made significant contributions to the field of image sensor technology. Although he currently holds no granted patents, his work in the industry has been influential.

Latest Patent Applications

John P. McCarten has filed several notable patent applications. One of his latest applications is for a "Backside Illumination Global Shutter Image Sensor with Trench Storage Gate." This image sensor may include an array of global shutter image pixels arranged in rows and columns. Each global shutter image pixel may feature a storage gate implemented as a trench transistor, which is at least partially covered by a corresponding backside deep trench isolation structure. The deep trench isolation structure can be filled with light-shielding material, resulting in improved global shutter efficiency.

Another significant application is for a "FinFET Pixel Architecture for Image Sensor Packages and Related Methods." This application discloses a FinFET pixel architecture for an image sensor. Specific implementations of a pixel may include a photodiode region coupled with a transfer region and one or more fin field-effect transistors (FinFETs). These FinFETs may serve various functions, including as a transfer transistor, a storage gate, a reset transistor, a source follower transistor, a row select transistor, or an anti-blooming gate.

Conclusion

John P. McCarten's work in image sensor technology showcases his innovative spirit and dedication to advancing the field. His latest patent applications reflect his commitment to improving image sensor efficiency and performance.