The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2026

Filed:

Nov. 29, 2023
Applicant:

Semiconductor Components Industries, Llc, Scottsdale, AZ (US);

Inventors:

John P. Mccarten, Penfield, NY (US);

Hung Q. Doan, Rochester, NY (US);

Konstantin G. Korablev, Penfield, NY (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 39/12 (2025.01); H10F 39/00 (2025.01); H10F 39/18 (2025.01);
U.S. Cl.
CPC ...
H10F 39/199 (2025.01); H10F 39/014 (2025.01); H10F 39/024 (2025.01); H10F 39/18 (2025.01); H10F 39/8037 (2025.01);
Abstract

An image sensor may include an array of global shutter image pixels arranged in rows and columns. Each global shutter image pixel may include a storage gate implemented as a trench transistor. The storage gate may be at least partially covered by a corresponding backside deep trench isolation structure. The deep trench isolation structure can be filled with light-shielding material. Configured in this way, the global shutter image pixel exhibits improved global shutter efficiency.


Find Patent Forward Citations

Mccarten, John. (2026). Backside illumination global shutter image sensor with trench storage gate (U.S. Patent No. 12772581). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12772581

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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