This inventor holds 1 USPTO granted patent. Top assignee: Texas Instruments Corporation. Active years: 2025.
Company Filing History:
Years Active: 2025
Title: John Macpeak: Innovator in Flash Memory Technology
Introduction
John Macpeak is a notable inventor based in Garland, TX (US), recognized for his contributions to the field of integrated circuits and flash memory technology. With a focus on innovative solutions, he has developed a patent that enhances the functionality of memory cells.
Latest Patents
John Macpeak holds a patent for "Select gate self-aligned patterning in split-gate flash memory cell." This invention involves an integrated circuit that features first and second gate stacks situated over a dielectric layer, which is placed on a semiconductor substrate. Each gate stack comprises a floating gate on the dielectric layer and a control gate positioned above the floating gate. The design includes a first select gate electrode adjacent to the first gate stack and a second select gate electrode next to the second gate stack. Notably, the adjacent sidewalls of these electrodes are designed with rounded top corners, contributing to the efficiency of split gate memory cells. He has 1 patent to his name.
Career Highlights
John Macpeak is currently employed at Texas Instruments Corporation, a leading company in semiconductor design and manufacturing. His work at Texas Instruments has allowed him to be at the forefront of technological advancements in memory cell design.
Collaborations
Throughout his career, John has collaborated with talented individuals such as Douglas Tad Grider, III, and Xiangzheng Bo, contributing to the development of innovative technologies in the field.
Conclusion
John Macpeak's contributions to flash memory technology through his patent demonstrate his commitment to innovation in the semiconductor industry. His work continues to influence advancements in integrated circuits, showcasing the importance of inventors in driving technological progress.