The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2025
Filed:
Jan. 27, 2020
Texas Instruments Incorporated, Dallas, TX (US);
Xiangzheng Bo, Plano, TX (US);
Douglas Tad Grider, Iii, McKinney, TX (US);
John Macpeak, Garland, TX (US);
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Abstract
An integrated circuit includes first and second gate stacks located over a dielectric layer that is in turn disposed over a semiconductor substrate. Each gate stack includes a floating gate located on the dielectric layer and a control gate located over the floating gate. A first select gate electrode is located on a side of the first gate stack and a second select gate electrode is located on a side of the second gate stack. The first and second select gate electrodes have adjacent sidewalls, each adjacent sidewall having a rounded top corner. The gate stacks may be portions of a split gate memory cell.