Arlington, VA, United States of America

John M Zavada

This inventor holds 2 USPTO granted patents. Top assignees: Kansas State University Research Foundation, The University of New Mexico, Other. Active years: 2012-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: John M Zavada. Retrieved from https://idiyas.com/inventor/john-m-zavada

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 50.0

Average Co-Inventor Count = 5.3

ph-index = 1

Forward Citations = 4(Granted Patents)


Location History:

  • Durham, NC (US) (2012)
  • Arlington, VA (US) (2015)

Company Filing History:


Years Active: 2012-2015

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2 patents (USPTO):Explore Patents

Title: John M Zavada: Innovator in Laser Technology and Semiconductor Materials

Introduction

John M Zavada is a notable inventor based in Arlington, VA (US). He has made significant contributions to the fields of laser technology and semiconductor materials. With a total of 2 patents, his work has implications for various applications in modern technology.

Latest Patents

Zavada's latest patents include the "Gas filled hollow fiber laser" and "Er doped III-nitride materials and devices synthesized by MOCVD." The gas filled hollow fiber laser patent describes an apparatus, systems, and methods that utilize an optically pumped gas filled hollow fiber laser, which can be implemented in a variety of applications. The operation of this laser is based on population inversion in the gas, and additional apparatus, systems, and methods are disclosed. The second patent focuses on the synthesis of Er doped GaN epilayers through in-situ doping by metal-organic chemical vapor deposition (MOCVD). This method results in a sharp photoluminescence emission peak at 1.54 μm, with minimal visible emission lines and a small thermal quenching effect. The incorporation of Er has little effect on the electrical conductivity of the GaN epilayers, allowing them to retain similar electrical properties as those of undoped GaN.

Career Highlights

Throughout his career, John M Zavada has worked with various organizations, including The University of New Mexico. His innovative research has contributed to advancements in laser technology and semiconductor materials, making him a respected figure in his field.

Collaborations

Zavada has collaborated with notable individuals such as Hongxing Jiang and Jingyu Lin. Their joint efforts have furthered research and development in the areas of laser technology and materials science.

Conclusion

John M Zavada's contributions to the fields of laser technology and semiconductor materials are significant. His patents reflect his innovative spirit and dedication to advancing technology. His work continues to influence various applications in modern science and engineering.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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