Other

The University of New Mexico

Kansas State University Research Foundation

John M Zavada

Jingyu Lin

Hongxing Jiang

Wolfgang G Rudolph

Brian Washburn

Kristan L Corwin

Amarin Ratanavis

Vasudevan Nampoothiri

Cris Ugolini

Andrew M Jones

Rajesh Kadel

Apparatus, systems, and methods using an optically pumped gas filled hollow fiber laser can be implemented in a variety of applications. In various embodiments, operation of an optically pumped gas filled hollow fiber laser is based on population inversion in the gas. Additional apparatus, systems, and methods are disclosed.

Gas filled hollow fiber laser

This disclosure relates to the synthesis of Er doped GaN epilayers by in-situ doping by metal-organic chemical vapor deposition (MOCVD). In an embodiment, both above and below bandgap excitation results in a sharp PL emission peak at 1.54 &#x3bc;m. Contrary with other growth methods, MOCVD grown Er-doped GaN epilayers exhibit virtually no visible emission lines, an present a small thermal quenching effect. The Er incorporation has very little effect on the electrical conductivity of the GaN epilayers and Er doped layers retain similar electrical properties as those of undoped GaN.

Er doped III-nitride materials and devices synthesized by MOCVD

Growing community of inventors

Arlington, VA, United States of America

John M Zavada