This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Microsemi Soc Corporation. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: John Lynn Mccollum: CMOS Pass Gate and Bootstrap Circuit Inventor
Introduction
John Lynn Mccollum is an inventor associated with Orem, Utah, and Microsemi SOC Corporation. His patent work concerns CMOS circuitry and techniques for improving transistor drive performance.
Latest Patents
Mccollum is credited with 1 patent: “Apparatus Including a CMOS Pass Gate Circuit and a Bootstrap Circuit.” The invention describes a complementary metal-oxide-semiconductor (CMOS) device containing a pass gate circuit, a control circuit, and a bootstrap circuit. The pass gate uses n-channel and p-channel transistors, while the control circuit activates or deactivates the gate. Electrically connected between the pass gate and control circuit, the bootstrap circuit can increase the drive gain of both transistors.
Career Highlights
Mccollum’s listed patent reflects work on CMOS device design, particularly circuitry intended to enhance the operation of pass-gate transistors. He is associated with Microsemi SOC Corporation.
Collaborations
The available information connects Mccollum’s patent and professional affiliation with Microsemi SOC Corporation. It does not identify specific co-inventors or other collaborators.
Conclusion
John Lynn Mccollum’s patent describes a CMOS pass gate and bootstrap arrangement designed to improve transistor drive gain, highlighting his contribution to semiconductor circuit innovation.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile