This inventor holds 1 USPTO granted patent. Top assignee: Freescale Semiconductor,inc.. Active years: 2012.
Company Filing History:
Years Active: 2012
Title: John L Huber: Innovator in Semiconductor Technology
Introduction
John L Huber is a notable inventor based in Gilbert, AZ (US). He has made significant contributions to the field of semiconductor technology, particularly with his innovative designs and patents. His work has had a lasting impact on the industry, showcasing his expertise and creativity.
Latest Patents
John L Huber holds a patent for a Laterally Diffused Metal Oxide Semiconductor (LDMOS) device with multiple gates and doped regions. This semiconductor device features a source region and a drain region within a semiconductor substrate, along with a control gate positioned between these regions. The design includes a first gate and a first doped region, enhancing the functionality and efficiency of the device. The method of forming this semiconductor device involves several steps, including depositing electrode material, patterning it to create gates, and implanting regions within the substrate.
Career Highlights
John L Huber is currently associated with Freescale Semiconductor, Inc., where he continues to innovate and contribute to advancements in semiconductor technology. His work at Freescale has allowed him to collaborate with other talented professionals in the field.
Collaborations
Some of his notable coworkers include Won Gi Min and Jiang-kai Zuo. Their collaborative efforts have furthered the development of cutting-edge semiconductor technologies.
Conclusion
John L Huber's contributions to semiconductor technology through his patent and work at Freescale Semiconductor, Inc. highlight his role as an influential inventor in the industry. His innovative designs continue to shape the future of semiconductor devices.