Freescale Semiconductor,inc.

John L Huber

Jiang-kai Zuo

Won Gi Min

A semiconductor device includes a source region within a semiconductor substrate, a drain region within the semiconductor substrate, a control gate over the semiconductor substrate and between the source region and the drain region, a first gate between the control gate and the drain region, and a first doped region within the semiconductor region and between the control gate and the first gate. The method of forming the semiconductor device may include depositing an electrode material over the semiconductor substrate, patterning the electrode material to form a control gate and a first gate, implanting a first doped region within the semiconductor substrate between the control gate and the first gate while using the control gate and the first gate as a mask, and implanting a source region within the semiconductor substrate.

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Gilbert, AZ, United States of America

John L Huber