John Joseph Gallagher

Title: John Joseph Gallagher: Innovator in AlGaN Wafer Technology

Introduction

John Joseph Gallagher is a notable inventor based in Winter Park, FL (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of aluminum gallium nitride (AlGaN) wafers. With a total of 4 patents to his name, Gallagher's work has advanced the capabilities of high-quality crystal growth.

Latest Patents

Gallagher's latest patents include a method for making free-standing AlGaN wafers. This innovative method involves forming a single crystal AlGaN layer directly on a single crystal LiAlO substrate using aluminum and gallium halide reactant gases. The process allows for the removal of the LiAlO substrate, resulting in a free-standing, single crystal AlGaN wafer. The growth of the AlGaN layer is achieved through vapor phase epitaxy (VPE), which provides rapid growth rates and produces a high-quality single crystal with a defect density of less than about 10 cm.

Career Highlights

Gallagher is currently employed at Crystal Photonics, Inc., where he continues to push the boundaries of semiconductor technology. His work has been instrumental in enhancing the performance and quality of AlGaN wafers, which are crucial for various electronic and optoelectronic applications.

Collaborations

Throughout his career, Gallagher has collaborated with esteemed colleagues such as David W. Hill and Herbert Paul Maruska. These partnerships have fostered innovation and contributed to the advancement of semiconductor research.

Conclusion

John Joseph Gallagher's contributions to the field of AlGaN wafer technology exemplify his dedication to innovation and excellence. His patents and ongoing work at Crystal Photonics, Inc. continue to shape the future of semiconductor technology.