The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2006
Filed:
Mar. 18, 2004
Bruce H. T. Chai, Oviedo, FL (US);
John Joseph Gallagher, Winter Park, FL (US);
David Wayne Hill, Orlando, FL (US);
Bruce H. T. Chai, Oviedo, FL (US);
John Joseph Gallagher, Winter Park, FL (US);
David Wayne Hill, Orlando, FL (US);
Crystal Photonics, Incorporated, Sanford, FL (US);
Abstract
A method is for making at least one semiconductor device including providing a sacrificial growth substrate of Lithium Aluminate (LiAlO); forming at least one semiconductor layer including a Group III nitride adjacent the sacrificial growth substrate; attaching a mounting substrate adjacent the at least one semiconductor layer opposite the sacrificial growth substrate; and removing the sacrificial growth substrate. The method may further include adding at least one contact onto a surface of the at least one semiconductor layer opposite the mounting substrate, and dividing the mounting substrate and at least one semiconductor layer into a plurality of individual semiconductor devices. To make the final devices, the method may further include bonding the mounting substrate of each individual semiconductor device to a heat sink. The step of removing the sacrificial substrate may include wet etching the sacrificial growth substrate.