The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2009
Filed:
Jan. 26, 2007
Herbert Paul Maruska, Winter Springs, FL (US);
John Joseph Gallagher, Winter Park, FL (US);
Mitch M. C. Chou, Sanford, FL (US);
David W. Hill, Orlando, FL (US);
Herbert Paul Maruska, Winter Springs, FL (US);
John Joseph Gallagher, Winter Park, FL (US);
Mitch M. C. Chou, Sanford, FL (US);
David W. Hill, Orlando, FL (US);
Crystal Photonics, Incorporated, Sanford, FL (US);
Abstract
A method for making a free-standing, single crystal, aluminum gallium nitride (AlGaN) wafer includes forming a single crystal AlGaN layer directly on a single crystal LiAlOsubstrate using an aluminum halide reactant gas, a gallium halide reactant gas, and removing the single crystal LiAlOsubstrate from the single crystal AlGaN layer to make the free-standing, single crystal AlGaN wafer. Forming the single crystal AlGaN layer may comprise depositing AlGaN by vapor phase epitaxy (VPE) using aluminum and gallium halide reactant gases and a nitrogen-containing reactant gas. The growth of the AlGaN layer using VPE provides commercially acceptable rapid growth rates. In addition, the AlGaN layer can be devoid of carbon throughout. Because the AlGaN layer produced is high quality single crystal, it may have a defect density of less than about 10cm.