John J Petrovic

Title: Innovations of John J Petrovic in Semiconductor Doping

Introduction

John J Petrovic is a notable inventor based in Cape Canaveral, FL (US). He has made significant contributions to the field of semiconductor materials, particularly through his innovative methods of doping these materials. His work has implications for the advancement of technology in various applications.

Latest Patents

John J Petrovic holds a patent for "Methods of doping semiconductor materials and metastable doped semiconductor materials produced thereby." This patent describes a process where the structures of base semiconductor materials, such as silicon (Si), are modified using isotope transmutation alloying. A radioisotope is introduced into the base semiconductor material, transforming it within the crystal lattice structure. This innovative approach allows for the production of metastable semiconductor materials doped with otherwise insoluble amounts of selected dopants.

Career Highlights

Throughout his career, Petrovic has focused on enhancing semiconductor technology. His patent reflects a deep understanding of material science and the potential for improving semiconductor performance through innovative doping techniques. He is associated with St3 LLC, where he continues to explore advancements in this field.

Collaborations

John J Petrovic has collaborated with notable colleagues, including A K Vasudevan and Timothy J Langan. These partnerships have likely contributed to the development and refinement of his innovative ideas in semiconductor doping.

Conclusion

John J Petrovic's work in semiconductor doping represents a significant advancement in material science. His innovative methods have the potential to influence various technological applications, showcasing the importance of continued research and development in this field.