The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2019
Filed:
May. 04, 2017
St3 Llc, Halethorpe, MD (US);
A. K. Vasudevan, Reston, VA (US);
John J. Petrovic, Cape Canerval, FL (US);
Timothy J. Langan, Catonsville, MD (US);
ST3 LLC, Halethorpe, MD (US);
Abstract
The structures of base semiconductor materials such as Si are modified by the use of isotope transmutation alloying. A radioisotope such as Siis added into a base semiconductor material such as Si, and the radioisotope is transformed to a transmuted form within the crystal lattice structure of the base semiconductor material. A master alloy comprising a relatively large amount of radioisotope such as Simay initially be made, followed by introduction of the master alloy into the base semiconductor material. When Siis used as the radioisotope, it may be transmuted into Pwithin an Si crystal lattice structure. Metastable semiconductor materials doped with otherwise insoluble amounts of selected dopants are produced as a result of the transmutation process.